Purpose:
A new type of wide bandgap semiconductor material, gallium oxide (Ga2O3), has attracted increasing attention and research in fields such as ultraviolet detection and high-frequency power devices due to its excellent performance and wider bandgap compared to third-generation semiconductor materials SiC and GaN. Gallium oxide is a wide bandgap semiconductor with a bandgap width of Eg=4.9 eV. It has excellent conductivity and luminescence properties, and therefore has broad application prospects in optoelectronic devices. It is used as an insulation layer for Ga based semiconductor materials and ultraviolet filters.
The gallium oxide annealing furnace produced by Qingdao Chenli is mainly suitable for scientific research institutions, universities, research institutions, and enterprises. Mainly used for annealing and other processes of 2-6 inch gallium oxide.
