Purpose:
This equipment is used for high-temperature diffusion, sintering, annealing and other processes in semiconductor production processes. The system has a precise instrument control system and a high-purity gas path system with high sealing and corrosion resistance. This device is mainly suitable for processing 8-inch process silicon wafers.
Structural form: Vertical
Operating temperature: 1200 ℃
Constant temperature zone: 750mm
Temperature control accuracy: ± 2 ℃
