This device is used for vacuum annealing, alloying, oxidation, diffusion and other processes in the production process of gallium nitride (GAN) chips. The system has a precise temperature control system and a vacuum pressure control system.
Main parameters:
Working temperature range: 600-1280 degrees.
Operating temperature: 1200 degrees.
Each furnace can process 25 pieces. 25 standard wafer boats.
Effective diameter of furnace tube: suitable for 6-inch pieces, can be compatible with 4 and 2 inches downwards.
Heating power: 18KVA per tube.
Power supply: three-phase five wire system: 380V three-phase five wire.
It has functions such as disconnection, over temperature alarm, and secondary protection.
