Purpose:
This device is used in the semiconductor chip production process to achieve vacuum annealing, vacuum alloying, vacuum crystallization and other processes in a controllable magnetic field. The system has precise magnetic field strength and temperature control system and high vacuum system.
Main technical parameters:
◆ Structural type: horizontal hot wall type
Working temperature range: 500 degrees, 700 degrees, 1100 degrees.
◆ Constant temperature zone length and accuracy: ± 0.5 ℃/800mm
Gas flow rate setting accuracy: ± 1% F S
Air tightness of the pneumatic system: 1 × 10-7pa.m3/s
Process uniformity: ≤± 5%
Control mode: Industrial microcomputer control
Vacuum degree: 5 * 10-4 Pa
◆ Record the number of process curves and steps without restriction
